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Why would a 6T cell (SRAM) be more fragile than a 1T1C (DRAM) cell?
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Because it's SRAM, and therefore it still can lose its electrons because we're working with cells a few atoms thick? The loss is not necessarily in L1 (where it's replaced frequently), but in L3 which now has memory comparable to PCs in the early 2000s (and can have its data "stuck" in the same physical area for minutes).



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